s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 20v r d s ( o n ) 100m ( v g s = - 4.5v ) r d s ( o n ) 150m ( v g s = - 2.5v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol 5 s ec s teady s tate uni t dr ai n- s our c e v ol tage v d s g ate- s our c e v ol tage v g s conti nuous dr ai n cur r ent * 1 t a= 25 - 2.4 - 2.2 t a= 70 - 1.9 - 1.8 p ul s ed dr ai n cur r ent * 2 i d m p ow er di s s i pati on * 1 t a= 25 0.9 0.7 w t a= 70 0 .57 0.45 t her m al res i s tanc e.j unc ti on- to- a m bi ent * 1 120 145 * 3 140 175 j unc ti on t em per atur e t j s tor age t em per atur e range t st g p d 150 - 55 to 150 r t h ja i d - 20 8 - 10 v a /w * 1 s ur fac e m ounted on f r4 b oar d, t 5 s ec . * 2 p ul s e w i dth l i m i ted by m ax i m um j unc ti on tem per atur e. * 3 s ur fac e m ounted on f r4 b oar d. g s d 2 3 1 p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 0 1 bds-hf ( k i 2 3 0 1 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 20 v v d s = - 20v , v g s = 0v - 1 v d s = - 20v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 0.4 -0.95 5 v v g s = - 4.5v , i d = - 2.8a 100 v g s = - 2.5v , i d = - 2.0a 150 v g s = - 4.5v , v d s - 5v - 6 a v g s = - 2.5v , v d s - 5v - 3 f or w ar d t r ans c onduc tanc e * 1 g fs v d s = - 5v , i d = - 2.8a 6.5 s input capac i tanc e * 2 c i ss 375 o utput capac i tanc e * 2 c o ss 95 rev er s e t r ans fer capac i tanc e * 2 c r ss 65 t otal g ate char ge * 2 q g 4.5 10 g ate s our c e char ge * 2 q g s 0.7 g ate dr ai n char ge * 2 q g d 1.1 t ur n- o n del ay t i m e * 3 t d ( o n ) 20 30 t ur n- o n ri s e t i m e * 3 t r 40 60 t ur n- o ff del ay t i m e * 3 t d ( o f f ) 30 45 t ur n- o ff f al l t i m e * 3 t f 20 30 5 s ec - 0.72 s teady s tate - 0.6 di ode f or w ar d v ol tage v s d i s =-0.75 a ,v g s = 0v - 0.8 - 1.2 v a v g s = - 4.5 v , v d s = - 6v , r l = 6 ,r g e n = 6 i d = - 1.0a m ax i m um b ody - di ode conti nuous cur r ent i s pf nc o n s tate dr ai n c ur r ent * 1 i d ( o n ) ns z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e v g s = 0v , v d s = - 6v , f= 1m hz v g s = - 4.5v , v d s = - 6v , i d = - 2.8a * 1 p ul s e tes t: p w 300u s duty c y c l e 2% . * 2 f or de s ig n a id o nly , not s ubj ec t to pr oduc ti on tes ti ng. * 3 s w i tc hi ng ti m e i s es s enti al l y i ndependent of oper ati ng tem per atur e. mar k ing m ar k i ng l1* f p-cha nne l mo s f e t si2 3 0 1 bds-hf ( k i 2 3 0 1 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 1 2 3 4 5 0 200 400 600 800 0 4 8 12 16 20 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 0 1 2 3 4 5 on-resistanc e v s . dra i n cu r r e n t s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s - dra i n - t o - s o u r c e v o l t a g e ( v ) - dr a i n cur r e n t ( a ) i d v g s - g a t e - t o - s o u r c e v o l t a g e ( v ) - dr a i n cur r e n t ( a ) i d t c = - 55 c 125 c v g s = 5 t h r u 2 . 5 v 1 . 5 v 2 v g a t e c h a r g e - g a t e - t o - s o u r c e v o l t a g e ( v ) q g - t o t a l g a t e ch a r g e ( n c ) v d s - dra i n - t o - s o u r c e v o l t a g e ( v ) c - c a p a ci ta n ce ( p f ) v gs c r s s c o s s c i s s v d s = 1 0 v i d = 2 . 8 a - on-resistance ( r ds(on) ) i d - dr a i n cur r e n t ( a ) capacitance o n - r e s i s t a n c e v s . j u n c t i o n t emperature v g s = 4 . 5 v i d = 2 . 8 a t j - j u n c t i o n t emp e r a t u r e ( c) (normalized) - on-resistance ( r ds(on) ) v g s = 2 . 5 v v g s = 4 . 5 v 25 c 1 v b p-cha nne l mo s f e t si2 3 0 1 bds-hf ( k i 2 3 0 1 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . ty pic al c har ac t er is it ic s 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 v a r i a n c e ( v ) v gs(th) - so u r ce cur r e n t ( a ) i s - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 t j = 1 5 0 c s o u r c e - d r a i n d i o d e f o r w a r d v oltage o n - r e s i s t a n c e v s . g a t e - t o - s o u r c e v oltage t h r e s h o l d v oltage s i n g l e p u l s e p o w e r s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) - on-resistance ( r ds(on) ) v s d v ) v ( e g a t l o v n i a r d - o t - e c r u o s - g s - g a t e - t o - s o u r c e v o l t a g e ( v ) t j - t emp e r a t u r e ( ) c e s ( e m i t ) c p o w e r ( w ) i d = 2 . 8 a i d = 2 5 0 a 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 2 5 c 1 t a = 2 5 c s a f e o p e r a t i ng a r e a v d s - dra i n - t o - s o u r c e v o l t a g e ( v ) 100 1 0.1 1 10 100 0.01 10 - d r a i n c u r r e n t ( a ) i d 0.1 1 0 s 1 0 0 s 1 m s 1 0 m s 1 0 0 m s t a = 2 5 c s i n g l e p u l s e 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 dc , 100 s, 10 s, 1 s p-cha nne l mo s f e t si2 3 0 1 bds-hf ( k i 2 3 0 1 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 5 m o s f e t ty pic al c har ac t er is it ic s normalize d t her m a l t rans i e n t i mped a n c e , j u n c t i o n - t o - a m b i e n t normal i z e d e f f e c t i v e t ransient t her m a l i mpe d a n c e 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 0 0 6 0 1 1 0.2 0.1 0.05 0.02 s i n g l e p u l s e d ut y cy c l e = 0 . 5 1. duty cycle, d = 2. per unit base = r t h j a = 62.5 c/w 3. t j m - t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 100 p-cha nne l mo s f e t si2 3 0 1 bds-hf ( k i 2 3 0 1 b d s - h f)
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